Silicon Carbide: Growth, Defects, and Device Characterisation v. 1

Covers our understanding of SiC as a semiconductor material in electronics. This work focuses on the material and covers methods of epitaxial and bulk growth. It discusses identification and characterization of defects. It helps the reader to develop an understanding of defects by combining theoretical and experimental approaches. Top page

Complete description

This book prestigiously covers our current understanding of SiC as a semiconductor material in electronics. Its physical properties make it more promising for high-powered devices than silicon. The volume is devoted to the material and covers methods of epitaxial and bulk growth. Identification and characterization of defects is discussed in detail. The contributions help the reader to develop a deeper understanding of defects by combining theoretical and experimental approaches. Apart from applications in power electronics, sensors, and NEMS, SiC has recently gained new interest as a substrate material for the manufacture of controlled graphene. SiC and graphene research is oriented towards end markets and has high impact on areas of rapidly growing interest like electric vehicles. The list of contributors reads like a 'Who's Who' of the SiC community, strongly benefiting from collaborations between research institutions and enterprises active in SiC crystal growth and device development. Top page

General info

Publisher & Imprint: Wiley-VCH Verlag GmbH

City: Weinheim

Pages: 520

More info: height 240 mm width 170 mm weight 1162 gr

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Age recommended: Professional and scholarly

Subject Indexing & Classification Dewey: 621.38152

Summary Silicon Carbide: Growth, Defects, and Device Characterisation v. 1 1) Bulk growth of SiC - review on advances of SiC vapor growth for improved doping and systematic study on dislocation evolution 2) Bulk and Epitaxial Growth of Micropipe-free Silicon Carbide on Basal and Rhombohedral Plane Seeds 3) Formation of extended defects in 4H-SiC epitaxial growth and development of fast growth technique 4) Fabrication of High Performance 3C-SiC Vertical MOSFETs by Reducing Planar Defects 5) Identification of intrinsic defects in SiC: Towards an understanding of defect aggregates by combining theoretical and experimental approaches 6) EPR Identification of Intrinsic Defects in 4H-SiC 7) Electrical and Topographical Characterization of Aluminum Implanted Layers in 4H Silicon Carbide 8) Optical properties of as-grown and process-induced stack-ing faults in 4H-SiC 9) Characterization of defects in silicon carbide by Raman spectroscopy 10) Lifetime-killing defects in 4H-SiC epilayers and lifetime control by low-energy electron irradiation 11) Identification and carrier dynamics of the dominant lifetime limiting defect in n- 4H-SiC epitaxial layers 12) Optical Beam Induced Current Measurements: principles and applications to SiC device characterisation 13) Measurements of Impact Ionization Coefficients of Electrons and Holes in 4H-SiC and their Application to Device Simulation 14) Analysis of interface trap parameters from double-peak conductance spectra taken on N-implanted 3C-SiC MOS capacitors 15) Non-basal plane SiC surfaces: Anisotropic structures and low-dimensional electron systems 16) Comparative Columnar Porous Etching Studies on n-type 6H SiC Crystalline faces 17) Micro- and Nanomechanical Structures for Silicon Carbide MEMS and NEMS 18) Epitaxial Graphene: an new Material 19) Density Functional Study of Graphene Overlayers on SiC Top page

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