Electrical Characterization of Organic Electronic Materials and Devices
by
Peter Stallinga
Offers fresh insights into the electronic properties and measurement techniques for low-mobility electronic devices and characterizes the thin-film transistor using its own model. This title links the phenomena seen in different device structures and different measurement techniques.
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Complete description
"Electrical Characterization of Organic Electronic Materials and Devices" gives new insights into the electronic properties and measurement techniques for low-mobility electronic devices; characterizes the thin-film transistor using its own model; links the phenomena seen in different device structures and different measurement techniques; presents clearly both how to perform electrical measurements of organic and low-mobility materials and how to extract important information from these measurements; and, provides a much-needed theoretical foundation for organic electronic.
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General info
Publisher & Imprint:
Wiley-Blackwell (an imprint of John Wiley & Sons Ltd)
City:
Chicester
Pages:
316
More info:
height 239 mm
width 162 mm
weight 588 gr
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Age recommended:
Professional and scholarly
Subject Indexing & Classification
Dewey: 621.381
Library of Congress Subject: Electronic apparatus and appliances - Materials
Summary
Electrical Characterization of Organic Electronic Materials and Devices
Preface 1 General concepts 1.1 Introduction 1.2 Conduction mechanism 1.3 Chemistry and the energy diagram 1.4 Disordered materials and the Meyer-Neldel Rule 1.5 Devices 1.6 Optoelectronics/photovoltaics 38 2 Two-terminal devices: DC current 2.1 Conductance 2.2 DC current of a Schottky barrier 2.3 DC measurements 3 Two-terminal devices: Admittance spectroscopy 3.1 Admittance spectroscopy 3.2 Geometrical capacitance 3.3 Equivalent circuits 3.4 Resistor; SCLC 3.5 Schottky diodes 3.6 MIS diodes 3.7 MIS tunnel diode 3.8 Noise measurements 4 Two-terminal devices: Transient techniques 4.1 Kinetics: Emission and capture of carriers 4.2 Current transient spectroscopy 4.3 Thermally stimulated current 4.4 Capacitance transient spectroscopy 4.5 Deep-level transient spectroscopy 4.6 Q-DLTS 5 Time-of-flight 5.1 Introduction 5.2 Drift transient 5.3 Diffusive transient 5.4 Violating einstein's relation 5.5 Multi-trap-and-release 5.6 Anomalous transients 5.7 High current (space charge) transients 5.8 Summary of the ToF technique 6 Thin-film transistors 6.1 Field-effect transistors 6.2 MOS-FET 6.3 Introducing TFTs 6.4 Basic model 6.5 Justification for the two-dimensional approach 6.6 Ambipolar materials and devices 6.7 Contact effects and other simple nonidealities 6.8 Metallic contacts in TFTs 6.9 Normally-on TFTs 6.10 Effects of traps 6.11 Admittance spectroscopy for the determination of the mobility in TFTs 6.12 Summary of TFT measurements 6.13 Diffusion transistor A Derivation of Equations (2.21), (2.25), (6.95) and (6.101) Bibliography Index
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