Compact MOSFET Models for VLSI Design
by
A.B. Bhattacharyya
Practicing designers, students, and educators in the semiconductor field face a portfolio of MOSFET models. This title presents a unified perspective on the topic, allowing the practitioner to view and interpret device phenomena concurrently using different modeling strategies. It helps readers learn to link device physics with model parameters.
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Complete description
Practicing designers, students, and educators in the semiconductor field face an ever expanding portfolio of MOSFET models. In "Compact MOSFET Models for VLSI Design", A.B. Bhattacharyya presents a unified perspective on the topic, allowing the practitioner to view and interpret device phenomena concurrently using different modeling strategies. Readers will learn to link device physics with model parameters, helping to close the gap between device understanding and its use for optimal circuit performance. Bhattacharyya also lays bare the core physical concepts that will drive the future of VLSI development, allowing readers to stay ahead of the curve, despite the relentless evolution of new models. This title adopts a unified approach to guide students through the confusing array of MOSFET models. It links MOS physics to device models to prepare practitioners for real-world design activities. It helps fabless designers bridge the gap with off-site foundries. It features rich coverage of: quantum mechanical related phenomena; Si-Ge strained-Silicon substrate; and, non-classical structures such as Double Gate MOSFETs.
It presents topics that will prepare readers for long-term developments in the field. It includes solutions in every chapter. This title can be tailored for use among students and professionals of many levels. It comes with MATLAB code downloads for independent practice and advanced study. This book is essential for students specializing in VLSI Design and indispensible for design professionals in the microelectronics and VLSI industries. Written to serve a number of experience levels, it can be used either as a course textbook or practitioner's reference. Access the MATLAB code, solution manual, and lecture materials at the companion website.
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General info
Publisher & Imprint:
Wiley-Blackwell (an imprint of John Wiley & Sons Ltd)
City:
Chicester
Pages:
456
More info:
height 244 mm
width 168 mm
weight 950 gr
thickness 23 mm
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Age recommended:
Professional and scholarly
Subject Indexing & Classification
Dewey: 621.395
Library of Congress Subject: Integrated circuits - Very large scale integration
Summary
Compact MOSFET Models for VLSI Design
Preface Acknowledgements List of Symbols 1 Semiconductor Physics Review for MOSFET Modeling 1.1 Introduction 1.2 Crystal Planes 1.3 Band Theory of Semiconductors 1.4 Carrier Statistics 1.5 Carrier Generation and Recombination 1.6 Carrier Scattering 1.7 Contacts and Interfaces 1.8 Strained Silicon 1.9 Basic Semiconductor Equations 1.10 Compact MOSFET Models 1.11 The p-n Junction Diode 1.12 Tunneling Through Potential Barrier References 2 Ideal Metal Oxide Semiconductor Capacitor 2.1 Physical Structure and Energy Band Diagram 2.2 Modes of Operation of MOS Capacitors 2.3 Electric Field and Potential Distributions 2.4 Potential Balance 2.5 Inversion Layer Thickness 2.6 Threshold Voltage 2.7 Small Signal Capacitance 2.8 Three Terminal Ideal MOS Structures References 3 Non-ideal and Non-classical MOS Capacitors 3.1 Introduction 3.2 Flat-Band Voltage 3.3 Inhomogeneous Substrate 3.4 Polysilicon Depletion Effect 3.5 Non-classical MOS Structures 3.6 MOS Capacitor With Stacked Gate References 4 Long Channel MOS Transistor 4.1 Introduction 4.2 Layout and Cross-Section of Physical Structure 4.3 Static Drain Current Model 4.4 Threshold Voltage (VT ) Based Model 4.5 Memelink-Wallinga Graphical Model 4.6 Channel Length Modulation 4.7 Channel Potential and Field Distribution Along Channel 4.8 Carrier Transit Time 4.9 EKV Drain Current Model 4.10 ACM and BSIM5 Models 4.11 PSP Model 4.12 HiSIM (Hiroshima University STARC IGFET Model) Model 4.13 Benchmark Tests for Compact DC Models References 5 The Scaled MOS Transistor 5.1 Introduction 5.2 Classical Scaling Laws 5.3 Lateral Field Gradient 5.4 Narrow and Inverse Width Effects 5.5 Reverse Short Channel Effect 5.6 Carrier Mobility Reduction 5.7 Velocity Overshoot 5.8 Channel Length Modulation: A Pseudo-2-D Analysis 5.9 Series Resistance Effect on Drain Current 5.10 Polydepletion Effect on Drain Current 5.11 Impact Ionization in High Field Region 5.12 Channel Punch-Through 5.13 Empirical Alpha Power MOSFET Model References 6 Quasistatic, Non-quasistatic, and Noise Models 6.1 Introduction 6.2 Quasistatic Approximation 6.3 Terminal Charge Evaluation 6.4 Quasistatic Intrinsic Small Signal Model 6.5 Extrinsic Capacitances 6.6 Non-quasistatic (NQS) Models 6.7 Noise Models References 7 Quantum Phenomena in MOS Transistors 7.1 Introduction 7.2 Carrier Energy Quantization in MOS Capacitor 7.4 Electron Concentration Distribution 7.5 Approximate Methods 7.6 Quantization Correction in Compact MOSFET Models 7.7 Quantum Tunneling 7.8 Gate Current Density 7.9 Compact Gate Current Models 7.10 Gate Induced Drain Leakage (GIDL) References 8 Non-classical MOSFET Structures 8.1 Introduction 8.2 Non-classical MOSFET Structures 8.3 Double Gate MOSFET Models References Appendix A: Expression for Electric Field and Potential Variation in the Semiconductor Space Charge under the Gate Appendix B: Features of Select Compact MOSFET Models Appendix C: PSP Two-point Collocation Method Index
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